{"id":5502,"date":"2024-07-18T15:00:03","date_gmt":"2024-07-18T06:00:03","guid":{"rendered":"http:\/\/www-dsc.naist.jp\/dsc_naist\/?p=5502"},"modified":"2024-08-13T16:44:29","modified_gmt":"2024-08-13T07:44:29","slug":"dsc-internal-talk-in-july2024","status":"publish","type":"post","link":"http:\/\/www-dsc.naist.jp\/dsc_naist\/en\/dsc-internal-talk-in-july2024\/","title":{"rendered":"DSC internal talk in July"},"content":{"rendered":"<p>Prof. Yuichi Sakumura gave a lecture in July.<\/p>\n<p>The details are as follows.<\/p>\n<p>====================<\/p>\n<p>Prof. Yuichi Sakumura (Data-driven Biology Laboratory)<\/p>\n<p>TITLE:<br \/>\nDerivation of Oscillatory Dynamics of Silicon Structure Under Indium Adsorption<\/p>\n<p>ABSTRACT\uff1a<br \/>\nIndium adsorption on silicon (Si) (111) surface, a model for thin film growth, is temperature-dependent and crucial for semiconductor device engineering. At low temperatures (290\u2103), Si showed 4\u00d71 and \u221a3\u00d7\u221a3 structures with chaotic fluctuations, complicating first-principles calculations. We used machine learning to derive the quantitative equations, revealing an oscillator relationship.<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<div class=\"block-list-appender wp-block\" tabindex=\"-1\" contenteditable=\"false\" data-block=\"true\">\n<div class=\"block-editor-default-block-appender\" data-root-client-id=\"\">\n<p class=\"block-editor-default-block-appender__content\" tabindex=\"0\" role=\"button\" aria-label=\"\u30c7\u30d5\u30a9\u30eb\u30c8\u30d6\u30ed\u30c3\u30af\u3092\u8ffd\u52a0\">\u00a0<\/p>\n<\/div>\n<\/div>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Prof. Yuichi Sakumura gave a lecture in July. The details are as follows. ==================== Prof. Yuichi Sakumura (Data-driven Biology Laboratory) TITLE: Derivation of Oscillatory Dynamics of Silicon Structure Under Indium Adsorption ABSTRACT\uff1a Indium adsorption on silicon (Si) (111) surface, a model for thin film growth, is temperature-dependent and crucial for semiconductor device engineering. At low [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_locale":"en_US","_original_post":"http:\/\/www-dsc.naist.jp\/dsc_naist\/?p=5498","_links_to":"","_links_to_target":""},"categories":[3],"tags":[],"event_taxonomy":[15],"acf":[],"_links":{"self":[{"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/posts\/5502"}],"collection":[{"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/comments?post=5502"}],"version-history":[{"count":3,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/posts\/5502\/revisions"}],"predecessor-version":[{"id":5505,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/posts\/5502\/revisions\/5505"}],"wp:attachment":[{"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/media?parent=5502"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/categories?post=5502"},{"taxonomy":"post_tag","embeddable":true,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/tags?post=5502"},{"taxonomy":"event_taxonomy","embeddable":true,"href":"http:\/\/www-dsc.naist.jp\/dsc_naist\/wp-json\/wp\/v2\/event_taxonomy?post=5502"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}