髙橋 崇典 助教（情報機能素子科学研究室）
Developments of oxide semiconductor materials toward three-dimensional integrated devices
Indium, Gallium, Zinc, and Tin related metal oxides are standard semiconductor material of thin-film transistor in display filed. Today, they have been attracting researcher’s attention as a channel material for next generation large scale integrated circuits and non-volatile memories in the point of view of lower power consumption based on their material properties such as ultra-low off leakage current and reasonably high-mobility. I believe that the performance and functions of oxide semiconductors need to be optimized and reviewed to accelerate integrated devices applications. This talk introduces unique material design and atomic layer deposition technique of oxide semiconductors toward integrated devices such as ferroelectric field effect transistor and back end of line-compatible transistor applications.